density functional theory band structure calculation

Hosseini, M., Elahi, M., Pourfath, M., Esseni, D.: Strain induced mobility modulation in single-layer MoS 2. Liu, G.-B., Shan, W.-Y., Yao, Y., Yao, W., Xiao, Di.: Three-band tight-binding model for monolayers of group-VIB transition metal dichalcogenides. Li, W., Walther, C.F.J., Kuc, A., Heine, T.: Density functional theory and beyond for band-gap screening: performance for transition-metal oxides and dichalcogenides. Knobloch, T., Illarionov, Y.Y., Ducry, F., Schleich, C., Wachter, S., Watanabe, K., Taniguchi, T., Mueller, T., Waltl, M., Lanza, M., Vexler, M.I., Luisier, M., Grasser, T.: The performance limits of hexagonal boron nitride as an insulator for scaled CMOS devices based on two-dimensional materials. Osanloo, M.R., Van de Put, M.L., Saadat, A., Vandenberghe, W.G.: Identification of two-dimensional layered dielectrics from first principles. In: IEEE International Electron Devices Meeting (IEDM), December 3–7 San Francisco, US. Luisier, M., Szabo, A., Stieger, C., Klinkert, C., Bruck, S., Jain, A., Novotny, L.: First-principles simulations of 2-D semiconductor devices: mobility, I-V characteristics, and contact resistance. Kaasbjerg, K., Thygesen, K.S., Jacobsen, K.W.: Phonon-limited mobility in n-type single-layer MoS 2 from first principles. Jin, Z., Li, X., Mullen, J.T., Kim, K.W.: Intrinsic transport properties of electrons and holes in monolayer transition-metal dichalcogenides. Shen, P.-C., Su, C., Lin, Y., Chou, A.-S., Cheng, C.-C., Park, J.-H., Chiu, M.-H., Lu, A.-Y., Tang, H.-L., Tavakoli, M.M., Pitner, G., Ji, X., Cai, Z., Mao, N., Wang, J., Tung, V., Li, J., Bokor, J., Zettl, A., Wu, C.-I., Palacios, T., Li, L.-J., Kong, J.: Ultralow contact resistance between semimetal and monolayer semiconductors. In: Symposium on VLSI Technology, Honolulu, HI, paper TN1.7, June 15–19, 2020. Ĭhou, A.S., Shen, P.C., Cheng, C.C., Lu, L.S., Chueh, W.C., Li, M.Y., Pitner, G., Chang, W.H., Wu, C.I., Kong, J., Li, L.J., Philip Wong, H.S.: High on-current 2D nFET of 390 ♚/µm at V DS = 1V using monolayer CVD MoS 2 without intentional doping. Ĭhen, K.-T., Hsieh, M.-H., Yen-Shuo, Su., Lee, W.-J., Chang, S.-T.: Carrier mobility calculation for monolayer black phosphorous. Li, L.K., Yu, Y.J., Ye, G.J., Ge, Q.Q., Ou, X.D., Wu, H., Feng, D.L., Chen, X.H., Zhang, Y.B.: Black phosphorus field-effect transistors. Wang, Q.H., Kalantar-Zadeh, K., Kis, A., Coleman, J.N., Strano, M.S.: Electronics and optoelectronics of two-dimensional transition metal dichalcogenides. IRDS 2020 version, the official website:

Density functional theory band structure calculation